ssm3j135tu 2014-03-01 1 toshiba field-effect transistor silicon p-chan nel mos type (u-mos ) ssm3j135tu power management switch applications ? 1.5 v drive ? low on-resistance: r ds(on) = 260 m ? (max) (@v gs = -1.5 v) r ds(on) = 180 m ? (max) (@v gs = -1.8 v) r ds(on) = 132 m ? (max) (@v gs = -2.5 v) r ds(on) = 103 m ? (max) (@v gs = -4.5 v) absolute maximum ratings (ta = 25c) characteristic symbol rating unit drain-source voltage v dss -20 v gate-source voltage v gss 8 v dc i d (note 1) -3.0 drain current pulse i dp (note 1) -6.0 a p d (note 2) 500 power dissipation t < 1s 1000 mw channel temperature t ch 150 c storage temperature range t stg ?55 to 150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause th is product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/vol tage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). note 1: the channel temperature should not exceed 150 c during use. note 2: mounted on fr4 board. (25.4 mm 25.4 mm 1.6 mm, cu pad: 645 mm 2 ) marking equivalent circuit (top view) unit: mm jedec D jeita D toshiba 2-2u1a weight: 6.6mg (typ.) jjn 1 2 3 1 2 3 1: gate 2: source 3: drain ufm start of commercial production 2011-02
ssm3j135tu 2014-03-01 2 electrical characteristics (ta = 25c) characteristic symbol test conditions min typ. max unit v (br) dss i d = -1 ma, v gs = 0 v -20 ? ? v drain-source breakdown voltage v (br) dsx i d = -1 ma, v gs = 5 v . (note 4) -15 ? ? v drain cut-off current i dss v ds = -20 v, v gs = 0 v ? ? -1 a gate leakage current i gss v gs = 8 v, v ds = 0 v ? ? 1 a gate threshold voltage v th v ds = -3 v, i d = -1 ma -0.3 ? -1.0 v forward transfer admittance ? y fs ? v ds = -3 v, i d = -1.0 a (note 3) 2.2 4.4 ? s i d = -1.0 a, v gs = -4.5 v (note 3) ? 79 103 i d = -0.6 a, v gs = -2.5 v (note 3) ? 98 132 i d = -0.4 a, v gs = -1.8 v (note 3) ? 117 180 drain?source on-resistance r ds (on) i d = -0.2 a, v gs = -1.5 v (note 3) ? 137 260 m input capacitance c iss ? 270 ? output capacitance c oss ? 40 ? reverse transfer capacitance c rss v ds = -10 v, v gs = 0 v f = 1 mhz ? 32 ? pf turn-on time t on ? 17 ? switching time turn-off time t off v dd = -10 v, i d = -1.0 a v gs = 0 to -2.5 v, r g = 4.7 ? 43 ? ns total gate charge q g ? 4.6 ? gate-source charge q gs1 ? 0.4 ? gate-drain charge q gd v dd = -10 v, i d = -2.0 a, v gs = -4.5v ? 0.9 ? nc drain-source forward voltage v dsf i d = 3.0 a, v gs = 0 v (note 3) ? 0.91 1.2 v note 3: pulse test note 4: if a forward bias is applied between gate and source, this device enters v (br)dsx mode. note that the drain-source breakdown voltage is lowered in this mode. switching time test circuit (a) test circuit (b) v in notice on usage v th can be expressed as the voltage between gate and sour ce when the low operating current value is i d = -1 ma for this product. for normal switching operation, v gs (on) requires a higher voltage than v th and v gs (off) requires a lower voltage than v th. (the relationship can be established as follows: v gs (off) < v th < v gs (on). ) take this into consideration when using the device. handling precaution when handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. thermal resistance r th (ch-a) and power dissipation p d vary depending on board material, board area, board thickness and pad area. when using this device, please ta ke heat dissipation into consideration. (c) v out v dd = 10 v r g = 4.7 duty 1% v in : t r , t f < 5 ns common source ta = 25c in 0 ? 2.5v 10 s v dd out r g r l t on 10% 90% ?2.5 v 0 v 90% 10% t off t r t f v ds ( on ) v dd
ssm3j135tu 2014-03-01 3 ambient temperature ta (c) v th ? ta gate threshold voltage v th (v) -1.0 0 ? 50 0 150 -0.5 50 100 drain?source on-resistance r ds (on) (m ? ) 0 -2 -4 -6 gate?source voltage v gs (v) 0 r ds (on) ? v gs -8 200 -25 c 25 c 400 100 ta = 100 c r ds (on) ? i d drain current i d (a) drain?source on-resistance r ds (on) (m ? ) 0 -2.0 -4.0 0 -6.0 300 100 200 v gs = -4.5 v -1.5 v -2.5 v -1.8v ambient temperature ta (c) r ds ( on ) ? ta drain?source on-resistance r ds (on) (m ? ) 0 ? 50 0 50 150 100 400 100 200 i d = -1.0 a / v gs = -4.5 v -0.2 a / -1.5 v -0.6 a / -2.5 v -0.4 a / -1.8 v drain?source voltage v ds (v) i d ? v ds drain current i d (a) 0 -3 0 -0.2 -0.4 -0.6 -1 -2 -0.8 -5 -6 -1 300 400 300 i d ? v gs drain current i d (a) -10 0 -0.1 -1 -0.001 -0.01 -0.0001 -2.0 -1.0 common source v ds = -3 v pulse test -25 c ta = 100 c 25 c i d = -1.0a common source pulse test common source ta = 2 5 c pulse test common source pulse test common source v ds = -3 v i d = -1 ma -4 i v gs = -1.5 v -1.8 v -2.5 v -4.5 v common source ta = 25 c pulse test gate?source voltage v gs (v)
ssm3j135tu 2014-03-01 4 drain current i d (a) forward transfer admittance ? y fs ? (s) |y fs | ? i d 0.1 -10 1 10 -0.1 -1 3 0.3 -0.01 common source v ds = -3 v ta = 25c pulse test drain current i d (a) switching time t (ns) t ? i d 1 -0.001 1000 -0.1 10000 -1 -10 100 t f common source v dd = -10 v v gs = 0 to -2.5 v ta = 25 c r g = 4.7 10 -0.01 t off t r t on total gate charge qg (nc) dynamic input characteristic gate?source voltage v gs (v) 0 0 4 8 -4 -8 10 -6 -2 2 6 v dd = - 16 v v dd = - 10 v common source i d = -2.0 a ta = 25c drain reverse current i dr (a) drain?source voltage v ds (v) i dr ? v ds 10 0 0.1 1 0.001 0.01 0.5 1.0 1.5 common source v gs = 0 v pulse test g d s i dr -25 c ta =100 c 25 c drain-source voltage v ds (v) c ? v ds capacitance c (pf) 10 -0.1 -1 -10 -100 100 1000 300 30 common source ta = 25 c f = 1 mhz v gs = 0 v c iss c oss c rss
ssm3j135tu 2014-03-01 5 ambient temperature ta (c) p d ? t a power dissipation p d (mw) 800 0 200 120 100 140 400 600 160 1000 80 60 40 20 0 -20 -40 mounted on fr4 board (25.4mm 25.4mm 1.6mm , cu pad : 645 mm 2 ) transient thermal impedance rth (c/w) pulse width t w (s) r th ? t w 0.001 0.01 0.1 600 1 10 100 1 100 600 10 b a single pulse a: mounted on fr4 board (25.4mm 25.4mm 1.6mm , cu pad : 645 mm 2 ) b: mounted on fr4 board (25.4mm 25.4mm 1.6mm , cu pad : 0.36 mm 2 3)
ssm3j135tu 2014-03-01 6 restrictions on product use ? toshiba corporation, and its subsidiaries and affiliates (collect ively "toshiba"), reserve the right to make changes to the in formation in this document, and related hardware, software and systems (collectively "product") without notice. ? this document and any information herein may not be reproduc ed without prior written permission from toshiba. even with toshiba's written permission, reproduc tion is permissible only if reproduction is without alteration/omission. ? though toshiba works continually to improve product's quality and reliability, product can malfunction or fail. customers are responsible for complying with safety standards and for prov iding adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a ma lfunction or failure of product could cause loss of human life, b odily injury or damage to property, including data loss or corruption. before customers use the product, create designs including the product, or incorporate the product into their own applications, cu stomers must also refer to and comply with (a) the latest versions of all relevant toshiba information, including without limitation, this document, the specifications, the data sheets and application notes for product and the precautions and condi tions set forth in the "toshiba semiconductor reliability handbook" and (b) the instructions for the application with which the product will be us ed with or for. customers are solely responsible for all aspe cts of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this product in such design or applications; (b) eval uating and determining the applicability of any info rmation contained in this document, or in c harts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operatin g parameters for such designs and applications. toshiba assumes no liability for customers' product design or applications. ? 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product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. ? the information contained herein is pres ented only as guidance for product use. no re sponsibility is assumed by toshiba for an y infringement of patents or any other intellectual property rights of third parties that may result from the use of product. no license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. ? absent a written signed agreement, except as provid ed in the relevant terms and conditions of sale for product, and to the maximum extent allowable by law, toshiba (1) assumes no liability wh atsoever, including without limitation, indirect, co nsequential, special, or incidental damages or loss, including without limitation, loss of profit s, loss of opportunities, business interruption and loss of data, and (2) disclaims any and all express or implied warranties and conditions related to sale, use of product, or information, including warranties or conditions of merchantability, fitness for a particular purpose, accuracy of information, or noninfringement. ? do not use or otherwise make available product or related so ftware or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or m anufacturing of nuclear, chemical , or biological weapons or missi le technology products (mass destruction w eapons). product and related software and technology may be controlled under the applicable export laws and regulations including, without limitat ion, the japanese foreign exchange and foreign trade law and t he u.s. export administration regulations. export and re-export of pr oduct or related software or technology are strictly prohibit ed except in compliance with all appl icable export laws and regulations. ? please contact your toshiba sales representative for details as to environmental matters such as the rohs compatibility of pro duct. please use product in compliance with all applicable laws and regula tions that regulate the inclusion or use of controlled subs tances, including without limitation, the eu rohs directive. toshiba assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations.
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